RB160L-60TF - ROHM

RB160L-60TF Schottky barrier diode

Schottky barrier diode RB160L-60TF Datasheet Applications General rectification Dimensions (Unit : mm) AEC-Q101 Qualified Land size figure (Unit : mm) 2.0 2.6±0.2 4.5 ±0.2 1 .2±0.3 5.0±0.3 2.0 4.2 Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability 44 ①② 0.1±0.02 　　　 0.1 2.0±0.2 for PMDS Construction ndeds Silicon epitaxi.

Features

1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability 44 ①② 0.1±0.02 　　　 0.1 2.0±0.2 for PMDS
Construction ndeds Silicon epitaxial planar 1.5±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture D ate
Structure
Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 mmeesign 2.9±0.1 4.0±0.1 φ1.55 co D
Absolute maximum ratings (Ta=25°C) e w Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 60 V R e Reverse voltage (DC) VR 60 V Average rectified forward current (
*1) Io 1 A t Forward current surge peak (60Hz/1cyc) IFSM 30 A N Junctio.