Data Sheet Schottky barrier diode RB160L-40 Applications General rectification Dimensions (Unit : mm) Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability Construction Silicon epitaxial planer 2.6±0.2 34 ①② 1.5 ±0.2 0.1±0.02 0.1 2.0±0.2 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Land size figure (Unit : mm) 2.0 PMDS Structure ROH.
1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability
Construction Silicon epitaxial planer
2.6±0.2
34 ①② 1.5 ±0.2
0.1±0.02 0.1
2.0±0.2
4.5±0.2 1.2±0.3
5.0±0.3
2.0 4.2
Land size figure (Unit : mm) 2.0
PMDS
Structure
ROHM : PMDS JEDEC : SOD-106
① ② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05 4.0±0.1
φ1.55±0.05
0.3
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak) Reverse voltage (DC)
VRM VR
Average rectified forward current
Io
Fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB160L-40TF |
ROHM |
Schottky barrier diode | |
2 | RB160L-60 |
Rohm |
Schottky barrier diode | |
3 | RB160L-60TF |
ROHM |
Schottky barrier diode | |
4 | RB160L-90 |
ROHM |
Schottky Barrier Diode | |
5 | RB160L |
Rohm |
Schottky barrier diode | |
6 | RB160A30 |
Rohm |
Schottky barrier diode | |
7 | RB160A40 |
Rohm |
Schottky barrier diode | |
8 | RB160A60 |
Rohm |
Schottky barrier diode | |
9 | RB160A90 |
Rohm |
Schottky barrier diode | |
10 | RB160M-30 |
Kexin |
Schottky Barrier Diode | |
11 | RB160M-30 |
Rohm |
Schottky barrier diode | |
12 | RB160M-30TF |
ROHM |
Schottky barrier diode |