RB095T-60 - ROHM

RB095T-60 Schottky Barrier Diode

Schottky barrier diode RB095T-60 Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer 6 Data Sheet Structure (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive) Reverse voltage(DC.

Features

1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planer 6 Data Sheet
Structure (1) (2) (3)
Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive) Reverse voltage(DC) Average rectified forward current (
*1) VRM 60 VR 60 Io 6 Fprward current surge peak (60Hz / 1cyc) Junction temperature IFSM Tj 100 150 Storage temperature Tstg 40 to 150 (
*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedanc.