RB095B-40 - ROHM

RB095B-40 Schottky Barrier Diode

Schottky barrier diode RB095B-40 Applications General rectification (Common cathode dual chip) Dimensions(Unit : mm) Features 1)Power mold type.(CPD3) 2)Low VF 3)High reliability Construction Silicon epitaxial planar Data Sheet Land size figure(Unit : mm) 6.0 3.0 2.0 6.0 1.6 1.6 CPD 2.3 2.3 Structure (2) Taping dimensions(Unit : mm) (1) .

Features

1)Power mold type.(CPD3) 2)Low VF 3)High reliability
Construction Silicon epitaxial planar Data Sheet
Land size figure(Unit : mm) 6.0 3.0 2.0 6.0 1.6 1.6 CPD 2.3 2.3
Structure (2)
Taping dimensions(Unit : mm) (1) (3)
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(
*1) VRM VR Io 45 40 6 Forward current surge peak (60Hz1cyc)(
*1) Junction temperature IFSM Tj 45 150 Storage temperature Tstg 40 to 150 (
*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120.