R6011KNX Nch 600V 11A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM PD 53W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* .
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube
*
- (Blank)
Bulk
*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID
*1 IDP
*2
600
V
±11
A
±33
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse Avalanche energy, single pulse.
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R6011KNJ |
ROHM |
Power MOSFET | |
2 | R6011ENJ |
INCHANGE |
N-Channel MOSFET | |
3 | R6011ENJ |
ROHM |
Power MOSFET | |
4 | R6011ENX |
INCHANGE |
N-Channel MOSFET | |
5 | R6011ENX |
ROHM |
Power MOSFET | |
6 | R601 |
Powerex Power Semiconductors |
General Purpose Rectifier | |
7 | R601 |
Okaya |
Coil Filters | |
8 | R6010ANX |
Rohm |
Drive Nch MOSFET | |
9 | R6010MND3 |
ROHM |
MOSFET | |
10 | R6010MNX |
INCHANGE |
N-Channel MOSFET | |
11 | R6010MNX |
ROHM |
Power MOSFET | |
12 | R6012ANJ |
Rohm |
Drive Nch MOSFET |