R1RW0408DI - Renesas

R1RW0408DI 4M High Speed SRAM

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buf.

Features

• Single 3.3V supply: 3.3V ± 0.3V
• Access time: 12ns (max)
• Completely static memory ⎯ No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible ⎯ All inputs and outputs
• Operating current: 100mA (max)
• TTL standby current: 40mA (max)
• CMOS standby current : 5mA (max)
• Temperature range: −40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-mil 36-pin plastic SOJ R10DS0287EJ0100 Rev.1.00 Nov.18.19 Page 1 of 10 R1RW0408DI Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name.