R1RW0404DGE-2LR - Renesas

R1RW0404DGE-2LR 4M High Speed SRAM

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RW040.

Features

• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RW0404D Series Ordering Information Type No. R1RW0404DGE-2PR R1RW0404DGE-2LR Access time 1.