R1RP0416DSB-2PR - Renesas

R1RP0416DSB-2PR 4M High Speed SRAM

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache.

Features

• Single 5.0V supply: 5.0V ± 10%
• Access time: 10ns / 12ns (max)
• Completely static memory ⎯ No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible ⎯ All inputs and outputs
• Operating current: 170mA / 160mA (max)
• TTL standby current: 40mA (max)
• CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) : 0.5mA (max) (S-version)
• Data retention current : 0.5mA (max) (L-version) : 0.2mA (max) (S-version)
• Data retention voltage: 2V (min) (L-version , S-version)
• Center VCC and VSS type pin out Ordering Information Type No. R1RP0416DGE-2PR R1RP0416D.