The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cach.
• Single 5.0V supply: 5.0V ± 10%
• Access time: 10ns /12ns (max)
• Completely static memory
⎯ No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
⎯ All inputs and outputs
• Operating current: 170mA / 160mA (max)
• TTL standby current: 40mA (max)
• CMOS standby current : 5mA (max)
• Center VCC and VSS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No. R1RP0416DGE-2PI R1RP0416DSB-0PI R1RP0416DSB-2PI
Access time 12ns 10ns 12ns
Package 400-mil 44-pin plastic SOJ
400-mil 44-pin plastic TSOPII
R10DS0285EJ0100 Rev.1.00 Nov.18.19
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R1RP0416DSB-2PR |
Renesas |
4M High Speed SRAM | |
2 | R1RP0416DSB-2LR |
Renesas |
4M High Speed SRAM | |
3 | R1RP0416DSB-2SR |
Renesas |
4M High Speed SRAM | |
4 | R1RP0416DSB-0PI |
Renesas |
4M High Speed SRAM | |
5 | R1RP0416DSB-0PR |
Renesas |
4M High Speed SRAM | |
6 | R1RP0416D |
Renesas |
4M High Speed SRAM | |
7 | R1RP0416DGE-2LR |
Renesas |
4M High Speed SRAM | |
8 | R1RP0416DGE-2PI |
Renesas |
4M High Speed SRAM | |
9 | R1RP0416DGE-2PR |
Renesas |
4M High Speed SRAM | |
10 | R1RP0416DGE-2SR |
Renesas |
4M High Speed SRAM | |
11 | R1RP0416DI |
Renesas |
4M High Speed SRAM | |
12 | R1RP0404D |
Renesas |
4M High Speed SRAM |