The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache .
• Single 5.0V supply: 5.0V ± 10%
• Access time: 12ns (max)
• Completely static memory
⎯ No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
⎯ All inputs and outputs
• Operating current: 130mA (max)
• TTL standby current: 40mA (max)
• CMOS standby current : 5mA (max)
: 1.0mA (max) (L-version)
• Data retention current : 0.5mA (max) (L-version)
• Data retention voltage : 2.0V (min) (L-version)
• Center VCC and VSS type pin out
Ordering Information
Type No. R1RP0408DGE-2PR R1RP0408DGE-2LR
Access time 12ns 12ns
Version Normal L-Version
Package 400-mil 36-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R1RP0408DGE-2PI |
Renesas |
4M High Speed SRAM | |
2 | R1RP0408DGE-2LR |
Renesas |
4M High Speed SRAM | |
3 | R1RP0408DGE-0PR |
Renesas |
4M High Speed SRAM | |
4 | R1RP0408D |
Renesas |
4M High Speed SRAM | |
5 | R1RP0408DI |
Renesas |
4M High Speed SRAM | |
6 | R1RP0404D |
Renesas |
4M High Speed SRAM | |
7 | R1RP0404DGE-2LR |
Renesas |
4M High Speed SRAM | |
8 | R1RP0404DGE-2PR |
Renesas |
4M High Speed SRAM | |
9 | R1RP0416D |
Renesas |
4M High Speed SRAM | |
10 | R1RP0416DGE-2LR |
Renesas |
4M High Speed SRAM | |
11 | R1RP0416DGE-2PI |
Renesas |
4M High Speed SRAM | |
12 | R1RP0416DGE-2PR |
Renesas |
4M High Speed SRAM |