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R1RP0408DGE-2PR |
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| Part Number | R1RP0408DGE-2PR |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit ... |
| Features |
• Single 5.0V supply: 5.0V ± 10% • Access time: 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 130mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) • Data retention current : 0.5mA (max) (L-version) • Data retention voltage : 2.0V (min) (L-version) • Center VCC and VSS type pin out Ordering Information Type No. R1RP0408DGE-2PR R1RP0408DGE-2LR Access time 12ns 12ns Version Normal L-Version Package 400-mil 36-... |
| Document |
 R1RP0408DGE-2PR Data Sheet
PDF 405.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R1RP0408DGE-2PI |
Renesas |
4M High Speed SRAM |
|
| 2 | R1RP0408DGE-2LR |
Renesas |
4M High Speed SRAM |
|
| 3 | R1RP0408DGE-0PR |
Renesas |
4M High Speed SRAM |
|
| 4 | R1RP0408D |
Renesas |
4M High Speed SRAM |
|
| 5 | R1RP0408DI |
Renesas |
4M High Speed SRAM |
|