QPA1010D - Qorvo

QPA1010D 15W GaN Power Amplifier

Qorvo’s QPA1010D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1010D operates from 7.9 – 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers ar.

Features

 Frequency Range: 7.9 
  – 11 GHz
 POUT: 42 dBm at PIN = 24 dBm
 PAE: 38 % at PIN = 24 dBm
 Large Signal Gain: 18 dB at PIN = 24 dBm
 Small Signal Gain: 25 dB
 Integrated Power Detector
 Bias: VD = 24 V, IDQ = 600 mA, VG = −1.9 V Typical
 Pulsed VD: PW =100 µS, DC = 10%
 Chip Dimensions: 2.75 x 1.65 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications
 Satellite Communications
 Data Links
 Military and Commercial Radar Ordering Information Part No. Description QP.