QPA1003D - Qorvo

QPA1003D 10W GaN Power Amplifier

Qorvo’s QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are.

Features

• Frequency Range: 1 
  – 8 GHz
• POUT: 40 dBm (PIN = 15 dBm)
• PAE: 30 % (PIN = 15 dBm)
• Large Signal Gain: 25 dB (PIN = 15 dBm)
• Small Signal Gain: 30 dB
• Bias: VD = +28 V, IDQ = 650 mA
• Chip Dimensions: 3.3 x 3.55 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 2 3 1 4 Applications
• Electronic Warfare (EW)
• Radar
• Communications
• Test Instrumentation Data Sheet Rev. F, July 2022 Ordering Information Part No. QPA1003D QPA1003DPCB4B01 Description 1 
  – 8 GHz 10 W GaN Power.