Q62702-B0858 |
Part Number | Q62702-B0858 |
Manufacturer | Siemens Semiconductor Group |
Description | BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 2... |
Features |
4 V, f = 1 MHz
Capacitance ratio
CT1/C T4 C1V-C 3V C3V-C 4V rs CC Ls
1.55 1.4 0.3 -
pF
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-23-1998 1998-11-01
BBY 51-02W
Diode capacitance CT = f (V R) f = 1MHz
EHD07128
Temperature coefficient TCc = f (V R), per diode, f = 1MHz
10
CT
pF 8
10 4 ppa TCC C
EHD07129
10 3
6
4
10 2
2
0
0
2
4
... |
Document |
Q62702-B0858 Data Sheet
PDF 14.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Q62702-B0853 |
Siemens Semiconductor Group |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) | |
2 | Q62702-B0854 |
Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) | |
3 | Q62702-B0825 |
Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) | |
4 | Q62702-B0839 |
Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) | |
5 | Q62702-B0860 |
Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance) |