Q62702-A1277 - Siemens Semiconductor Group

Q62702-A1277 Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

BAV 99S Silicon Switching Diode Array • For high-speed switching applications • Connected in series • Internal (galvanic) isolated Diodes in one package 4 5 6 2 1 3 VPS05604 Type BAV 99S Marking Ordering Code A7s Q62702-A1277 Pin Configuration Package 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse vo.

Features

V I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD t rr - - 1.5 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor .