PZTA96T1 - Motorola

PZTA96T1 High Voltage Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA96T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 PZTA96T1 Motorola Preferred Device MAXIMUM RATINGS BASE 1 EMITTER 3 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Rating Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Volta.

Features

age (IC =
  –100 µAdc, IE = 0) V(BR)CBO
  – 450 — Vdc Emitter
  –Base Breakdown Voltage (IE =
  –10 µAdc, IC = 0) V(BR)EBO
  – 5.0 — Vdc Collector
  –Base Cutoff Current (VCB =
  – 400 Vdc, IE = 0) ICBO —
  – 0.1 µAdc Emitter
  –Base Cutoff Current (VBE =
  – 4.0 Vdc, IC = 0) IEBO —
  – 0.1 µAdc ON CHARACTERISTICS DC Current Gain(2) (IC =
  – 10 mAdc, VCE =
  – 10 Vdc) hFE 50 150 — Saturation Voltages (IC =
  –20 mAdc, IB =
  –2.0 mAdc) (IC =
  –20 mAdc, IB =
  –2.0 mAdc) Vdc VCE(sat) —
  – 0.6 VBE(sat) —
  – 1.0 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounti.