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PZTA96ST1G - ON Semiconductor

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PZTA96ST1G High Voltage Transistor

PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissip.

Features


• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD W 1.5 Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not impl.

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