PU3117 - Panasonic Semiconductor

PU3117 (PUA3117) Silicon NPN triple diffusion planar type

Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.2±0.3 Unit: mm 4.0±0.2 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.2.

Features

• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5
■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 .