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PU3117 |
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| Part Number | PU3117 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.2±0.3 Unit: mm 4.0±0.2 ■ Features • High forward current transfer ratio hF... |
| Features |
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 ... |
| Document |
 PU3117 Data Sheet
PDF 89.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PU3120 |
Panasonic Semiconductor |
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE |
|
| 2 | PU3124 |
Panasonic Semiconductor |
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE POWER AMPLIFIER SWITCHING |
|
| 3 | PU3127 |
Panasonic Semiconductor |
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE POWER AMPLIFIER SWITCHING |
|
| 4 | PU3219 |
Panasonic Semiconductor |
Silicon NPN Epitaxial Planar Darlington Type |
|
| 5 | PU3220 |
Panasonic Semiconductor |
Power Transistor Arrays |
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