SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for high frequ.
Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications High frequency computer motherboard DC-to-DC convertors OR-ing applicationss 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 75 A; VDS = 60 V; Tj = 25 °C; see Figure 11 .
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN005-75P |
nexperia |
N-channel MOSFET | |
2 | PSMN005-75P |
NXP Semiconductors |
N-Channel MOSFET | |
3 | PSMN005-25D |
Philips |
N-channel logic level TrenchMOS transistor | |
4 | PSMN005-30K |
NXP Semiconductors |
TrenchMOS FET | |
5 | PSMN005-55B |
Philips |
N-channel logic level TrenchMOS transistor | |
6 | PSMN005-55P |
Philips |
N-channel logic level TrenchMOS transistor | |
7 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET | |
8 | PSMN002-25P |
NXP Semiconductors |
N-Channel MOSFET | |
9 | PSMN003-25W |
Philips |
N-channel logic level TrenchMOS transistor | |
10 | PSMN003-30B |
NXP Semiconductors |
N-Channel MOSFET | |
11 | PSMN003-30P |
NXP Semiconductors |
N-Channel MOSFET | |
12 | PSMN004-25B |
Philips |
N-channel logic level TrenchMOS transistor |