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PSMN005-75B |
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| Part Number | PSMN005-75B |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communi... |
| Features |
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
High frequency computer motherboard DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A; VDS = 60 V; Tj = 25 °C; see Figure 11
... |
| Document |
 PSMN005-75B Data Sheet
PDF 683.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PSMN005-75B |
NXP Semiconductors |
N-Channel MOSFET |
|
| 2 | PSMN005-75P |
nexperia |
N-channel MOSFET |
|
| 3 | PSMN005-75P |
NXP Semiconductors |
N-Channel MOSFET |
|
| 4 | PSMN005-25D |
Philips |
N-channel logic level TrenchMOS transistor |
|
| 5 | PSMN005-30K |
NXP Semiconductors |
TrenchMOS FET |
|