Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. 123 Marking code: F5. DESCRIPTION cathode cathode anode anode cathode cathode 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666 and symbol). LIMITING VALUES In a.
• Forward current: 1.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
PINNING PIN 1 2 3 4 5 6
handbook, halfpag6e 5 4
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package.
1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG2015EA |
Philips |
Low VF (MEGA) Schottky barrier diode | |
2 | PMEG2015EH |
NXP Semiconductors |
20 V/ 1.5 A very low VF MEGA Schottky barrier rectifiers | |
3 | PMEG2015EH |
nexperia |
MEGA Schottky barrier rectifiers | |
4 | PMEG2015EJ |
NXP Semiconductors |
20 V/ 1.5 A very low VF MEGA Schottky barrier rectifiers | |
5 | PMEG2015EJ |
nexperia |
MEGA Schottky barrier rectifiers | |
6 | PMEG2015EPK |
NXP |
MEGA Schottky barrier rectifier | |
7 | PMEG2010AEB |
NXP Semiconductors |
20V 1A ultra low VF MEGA Schottky barrier rectifier | |
8 | PMEG2010AEB |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
9 | PMEG2010AEH |
NXP |
MEGA Schottky barrier rectifiers | |
10 | PMEG2010AEJ |
NXP |
1A very low VF MEGA Schottky barrier rectifer | |
11 | PMEG2010AEJ |
nexperia |
MEGA Schottky barrier rectifier | |
12 | PMEG2010AET |
NXP |
MEGA Schottky barrier rectifiers |