PM50RSE120 - Mitsubishi Electric Semiconductor

PM50RSE120 Intelligent Power Module

MITSUBISHI MITSUBISHI MODULES> PM50RSE120 PM50RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery ch.

Features

epth Min9.0 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 20 2±0.5 17 123 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 P 17.5 12 N W 89±1 V U 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22
  –0.5 +1.0 3.22 2-2.54 4.5 0.64 A : DETAIL 11.6 32.6 31.6 19.4 LABEL 4 22 1.6 10.6 A 10 B φ2.54 Jul. 2005 MITSUBISHI PM50RSE120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ Br Fo VNC W N VN1 VN UN VWPC WP VWP1 VVPC VP .