PM50RSE060 - Mitsubishi Electric Semiconductor

PM50RSE060 Intelligent Power Module

MITSUBISHI MITSUBISHI MODULES> PM50RSE060 PM50RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is desig.

Features

wing depth Min9.0 4-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 20 2±0.5 17 123 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 P 17.5 12 N W 89±1 V U 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22
  –0.5 +1.0 3.22 2-2.54 11.6 1.6 32.6 A : DETAIL 31.6 19.4 LABEL 4 22 10.6 A 4.5 0.64 10 B φ2.54 Jul. 2005 MITSUBISHI PM50RSE060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ Br Fo VNC W N VN1 VN.