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PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET FEATURES • 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives ITO-220AB/TO-251 ITO-220AB TO -251 .
• 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB/TO-251 ITO-220AB
TO -251
2 1 DS G
G 2 D 3 S
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJF2N70 PJU2N70
MARKING
F2N70 U2N70
PACKAGE
ITO-220AB TO-251
PACKING
50PCS/TUBE 80PCS/TUBE
Gate Source
Maxim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PJU2NA60 |
Pan Jit International |
600V N-Channel MOSFET |
|
| 2 | PJU2NA90 |
Pan Jit International |
900V N-Channel MOSFET |
|
| 3 | PJU14P06A |
Pan Jit International |
60V P-Channel Enhancement Mode MOSFET |
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| 4 | PJU1N60 |
Pan Jit |
600V N-Channel MOSFET |
|
| 5 | PJU1N80 |
Pan Jit International |
800V N-Channel Enhancement Mode MOSFET |
|
| 6 | PJU1NA50 |
Pan Jit International |
500V N-Channel MOSFET |
|
| 7 | PJU1NA60A |
Pan Jit International |
600V N-Channel MOSFET |
|
| 8 | PJU1NA80 |
Pan Jit International |
800V N-Channel MOSFET |
|
| 9 | PJU3NA50 |
Pan Jit International |
500V N-Channel MOSFET |
|
| 10 | PJU4NA70 |
Pan Jit International |
700V N-Channel MOSFET |
|
| 11 | PJU4NA90 |
Pan Jit International |
900V N-Channel MOSFET |
|
| 12 | PJU50N10L |
Pan Jit International |
100V N-Channel Enhancement Mode MOSFET |
|