PJU1N80 - Pan Jit International

PJU1N80 800V N-Channel Enhancement Mode MOSFET

PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB/TO-251 TO-220AB TO -25.

Features

• 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A
•
•
•
•
•
• Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB/TO-251 TO-220AB TO -251 3 23 12 D S 1 G G 1 D 2 2 S 3 3 MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERINGINFORMATION TYPE PJP1N80 PJU1N80 MARKING P1N80 U1N80 PACKAGE TO-220AB TO-251 PACKING 50PCS/TUBE 80PCS/TUBE Ga.