PJSR12 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Additionaly the TVS Device offers overvoltage transient protection b.
Peak Power Dissipation of 500W 8/20µs Maximum www.DataSheet4U.com Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O2 3 1 2 I/O1 Maximum Leakage Current of 1µA @ VRWM Industry Standard SMT Package SOT143 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE PRODUCT) VREF 4 1 GND APPLICATIONS RS422 Interface LAN/WLAN Access Point terminals Industrial control communication ports I 2C Bus Protection SOT143 Marking Code: S12 MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Wavefor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJSR05 |
Pan Jit International |
Low Capacitance TVS and Diode Array | |
2 | PJSR70 |
Pan Jit International |
Low Capacitance Diode Array | |
3 | PJSRV05-4 |
Pan Jit International |
Low Capacitance TVS and Diode Array | |
4 | PJSRV05W-4 |
Pan Jit International |
Low Capacitance TVS and Diode Array | |
5 | PJSRV05W-4GDW |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
6 | PJSRV05W-4GW5 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
7 | PJSRV05W-4GW6 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
8 | PJS6400 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
9 | PJS6401 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
10 | PJS6404 |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
11 | PJS6405 |
Pan Jit International |
P-Channel Enhancement Mode MOSFET | |
12 | PJS6413 |
PAN JIT |
20V P-Channel MOSFET |