PHPT60415PY - nexperia

PHPT60415PY PNP Transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency .

Features

• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified. 3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Co.