PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High ener.
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current tp ≤ 1 ms;.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHPT60606NY |
NXP |
NPN high power bipolar transistor | |
2 | PHPT60606NY |
nexperia |
NPN transistor | |
3 | PHPT60603NY |
nexperia |
NPN Transistor | |
4 | PHPT60603PY |
nexperia |
PNP Transistor | |
5 | PHPT60610NY |
nexperia |
NPN Transistor | |
6 | PHPT60610PY |
nexperia |
PNP Transistor | |
7 | PHPT60406NY |
nexperia |
NPN Transistor | |
8 | PHPT60406PY |
nexperia |
PNP Transistor | |
9 | PHPT60410NY |
nexperia |
NPN Transistor | |
10 | PHPT60410PY |
nexperia |
PNP Transistor | |
11 | PHPT60415NY |
NXP |
NPN high power bipolar transistor | |
12 | PHPT60415NY |
nexperia |
NPN transistor |