N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP80N06T QUICK REFERENCE DATA SYMBOL .
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP80N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 75 178 175 14 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP80N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
2 | PHP8.4 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
3 | PHP8.4 |
Protek Devices |
(PHP8.4 - PHP500) AC POWER BUS VOLTAGE SUPPRESSOR | |
4 | PHP82NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP83N03LT |
NXP |
N-channel TrenchMOS transistor | |
6 | PHP87N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
7 | PHP87N03T |
NXP |
TrenchMOS transistor Standard level FET | |
8 | PHP8N20E |
NXP |
PowerMOS transistor | |
9 | PHP8N50 |
Philips |
PowerMOS transistor | |
10 | PHP8N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
11 | PHP8ND50E |
NXP |
PowerMOS transistors FREDFET/ Avalanche energy rated | |
12 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET |