N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK .
voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 5 3.5 20 60 0.4 ± 30 40 5 175 UNIT A A A W W/K V mJ A ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W October 1997 1 Rev 1.100.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP5N40 |
NXP |
PowerMOS transistor | |
2 | PHP5N40E |
NXP |
PowerMOS transistor | |
3 | PHP500 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
4 | PHP50N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
5 | PHP50N03T |
NXP |
TrenchMOS transistor Standard level FET | |
6 | PHP50N06 |
NXP |
PowerMOS transistor | |
7 | PHP50N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
8 | PHP54N06T |
NXP |
N-Channel MOSFET | |
9 | PHP55N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
10 | PHP55N03LTA |
NXP |
N-channel enhancement mode field-effect transistor | |
11 | PHP55N03LTA |
Philips |
Logic Level FET | |
12 | PHP55N03T |
NXP |
TrenchMOS transistor Standard level FET |