Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain curren.
rage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 52 36 208 150 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.0 UNIT K/W K/W August 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP50N06 STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-sou.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHP50N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 2 | PHP50N03T |
NXP |
TrenchMOS transistor Standard level FET |
|
| 3 | PHP50N06LT |
NXP |
TrenchMOS transistor Logic level FET |
|
| 4 | PHP500 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module |
|
| 5 | PHP54N06T |
NXP |
N-Channel MOSFET |
|
| 6 | PHP55N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 7 | PHP55N03LTA |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 8 | PHP55N03LTA |
Philips |
Logic Level FET |
|
| 9 | PHP55N03T |
NXP |
TrenchMOS transistor Standard level FET |
|
| 10 | PHP5N20E |
NXP |
PowerMOS transistor |
|
| 11 | PHP5N40 |
NXP |
PowerMOS transistor |
|
| 12 | PHP5N40E |
NXP |
PowerMOS transistor |
|