PFP65T360 - Wing On

PFP65T360 N-Channel Super Junction MOSFET

PFP65T360 / PFF65T360 PFP65T360 / PFF65T360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-2.

Features

 New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate 
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●  Source TO-220 TO-220F APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) G DS G DS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP65T360 PFF65T360 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current
  – Continuous (TC = 25℃).