PFP6N70E - Wing On

PFP6N70E N-Channel MOSFET

Sep 2012 PFP6N70E / PFF6N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitabl.

Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP6N70E/PFF6N70E 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.80 Ω ID = 6.0 A TO-220 Drain  Gate 
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●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source A.