July 2008 PFP2N65 / PFF2N65 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V APPLICATION High current, High speed switching Suitable.
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP2N65/PFF2N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 4.2 Ω ID = 1.8 A
TO-220
Drain
Gate
●
◀▲
●
●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PFP2N60 |
Wing On |
N-Channel Super Junction MOSFET | |
2 | PFP2N70 |
Wing On |
N-Channel MOSFET | |
3 | PFP |
Omron Electronics |
DIN Rail Mounting Track | |
4 | PFP100N10S |
Wing On |
N-Channel Super Junction MOSFET | |
5 | PFP10N40 |
Wing On |
N-Channel MOSFET | |
6 | PFP10N60 |
Wing On |
N-Channel MOSFET | |
7 | PFP10N65 |
Wing On |
N-Channel MOSFET | |
8 | PFP10N80A |
Wing On |
N-Channel MOSFET | |
9 | PFP10N80E |
Wing On |
N-Channel MOSFET | |
10 | PFP110N10S |
Wing On |
N-Channel Super Junction MOSFET | |
11 | PFP12N65 |
Wing On |
650V N-Channel MOSFET | |
12 | PFP12N65E |
Wing On |
N-Channel MOSFET |