PFP12N65E - Wing On

PFP12N65E N-Channel MOSFET

PFP12N65E / PFF12N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.48 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for po.

Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.48 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP12N65E/PFF12N65E 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.48 Ω ID = 12.2 A TO-220 Drain  Gate 
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●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. So.