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Feb 2009 PFP13N50/PFF13N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION Electronic lamp ballasts based on half bridge .
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFP13N50/PFF13N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on)typ = 0.46 Ω ID = 12.5 A
Drain {
Gate
{
●
◀▲
●
●
Source
{
TO-220
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. .
PFP13N50 - Wing On
Feb 2009 PFP13N50 / PFF13N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extrem.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PFP13N60 |
Wing On |
N-Channel MOSFET |
|
| 2 | PFP100N10S |
Wing On |
N-Channel Super Junction MOSFET |
|
| 3 | PFP10N40 |
Wing On |
N-Channel MOSFET |
|
| 4 | PFP10N60 |
Wing On |
N-Channel MOSFET |
|
| 5 | PFP10N65 |
Wing On |
N-Channel MOSFET |
|
| 6 | PFP10N80A |
Wing On |
N-Channel MOSFET |
|
| 7 | PFP10N80E |
Wing On |
N-Channel MOSFET |
|
| 8 | PFP110N10S |
Wing On |
N-Channel Super Junction MOSFET |
|
| 9 | PFP12N65 |
Wing On |
650V N-Channel MOSFET |
|
| 10 | PFP12N65E |
Wing On |
N-Channel MOSFET |
|
| 11 | PFP140N10S |
Wing On |
N-Channel Super Junction MOSFET |
|
| 12 | PFP150N08S |
Wing On |
N-Channel Super Junction MOSFET |
|