in this catalog regarding product characteristics and quality are based solely on discrete components. When using these components, be sure to check the specifications with the component in question mounted on the products. • The manufacturer’s warranty will not cover any disadvantage or damage caused by improper use of the products that deviates from the c.
• Excellent noise absorption performance at GHz frequency
• Extreme low ESL and high current capability
• High Capacitance and very low ESR based on our Conductive Polymer technology
• Distributed capacitance architecture and transmission-line structure
DIMENSIONS [mm] PERFORMANCE (reference)
www.DataSheet.co.kr
L Z1
P2 P1 Z2
W1
0E 128
Negative electrode
Positive electrode H
Positive electrode
+
Case Code F25 F20 L W1 W2 H P1
GND
P2 Z1
+
W2
mm Z2
16.7±0.2 12.1±0.2 11.9±0.2 2.5Max 8.0±0.2 13.0±0.2 1.0±0.2 1.2±0.2 16.7±0.2 12.1±0.2 11.9±0.2 2.0Max 8.0±0.2 13.0±0.2 1.0±0.2 1.2±0.2 12..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PFAF250E128MNSTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
2 | PFAF250E128MTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
3 | PFAF250E158MTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
4 | PFAF250E907MCBTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
5 | PFAF200D108MCDTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
6 | PFAF200D188MNRTE |
NEC |
New High Speed Decoupling Device Proadlizer | |
7 | PFA1212200D108MCDC |
NEC |
New High Speed Decoupling Device Proadlizer | |
8 | PFA2V50 |
PFC Device Corporation |
MOS Schottky Rectifier | |
9 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
10 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
11 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
12 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier |