PF5103 N-Channel Switch October 2006 PF5103 N-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. tm TO-92 1 2 3 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Symbol VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-S.
• This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51.
tm
TO-92
1 2 3
Marking : PF5103
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings
*
Symbol
VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
Ta = 25°C unless otherwise noted
Parameter
Value
40 -40 50 -55 ~ 150
Units
V V mA °C
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings a.
The NF5101-3 (TO-72) and PF5101-3 (TO-92) are N-channel silicon Junction Field-Effect Transistors designed for ultra-low.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF5101 |
National Semiconductor |
N-Channel JFET | |
2 | PF5102 |
Fairchild Semiconductor |
N-Channel Switch | |
3 | PF5102 |
National Semiconductor |
N-Channel JFET | |
4 | PF5000 |
WON-TOP |
PRESS-FIT DIODE | |
5 | PF5001 |
WON-TOP |
PRESS-FIT DIODE | |
6 | PF5002 |
WON-TOP |
PRESS-FIT DIODE | |
7 | PF5003 |
WON-TOP |
PRESS-FIT DIODE | |
8 | PF5004 |
WON-TOP |
PRESS-FIT DIODE | |
9 | PF5005 |
WON-TOP |
PRESS-FIT DIODE | |
10 | PF5006 |
WON-TOP |
PRESS-FIT DIODE | |
11 | PF500A-360 |
DENSEI-LAMBDA |
PFHC module 500W/ 1000W | |
12 | PF5020 |
WON-TOP |
PRESS-FIT DIODE |