PF5102 PF5102 N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage .
S = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 125°C VDS = 15V, ID = 1.0nA IG = 1.0mA, VDS = 0 VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1.0KHz VDS = 15V, ID = 500µA, f = 1.0KHz VDG = 15V, VGS = 0, f = 1.0MHz VDG = 15V, VGS = 0, f = 1.0MHz 4.0 11,000 25 16 6 -0.7 Min. -40 -1.0 -0.2 -1.6 1.0 20 nA µmhous µmhous pF pF Max. Units V nA µA V Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Forward Voltage Zero-Gate Voltage Drain Current
* Forward Transfer Conductance Output Conductance Input Capacitace Reverse Transfer Capacitance
On Characteristics S.
The NF5101-3 (TO-72) and PF5101-3 (TO-92) are N-channel silicon Junction Field-Effect Transistors designed for ultra-low.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF5101 |
National Semiconductor |
N-Channel JFET | |
2 | PF5103 |
Fairchild Semiconductor |
N-Channel Switch | |
3 | PF5103 |
National Semiconductor |
N-Channel JFET | |
4 | PF5000 |
WON-TOP |
PRESS-FIT DIODE | |
5 | PF5001 |
WON-TOP |
PRESS-FIT DIODE | |
6 | PF5002 |
WON-TOP |
PRESS-FIT DIODE | |
7 | PF5003 |
WON-TOP |
PRESS-FIT DIODE | |
8 | PF5004 |
WON-TOP |
PRESS-FIT DIODE | |
9 | PF5005 |
WON-TOP |
PRESS-FIT DIODE | |
10 | PF5006 |
WON-TOP |
PRESS-FIT DIODE | |
11 | PF500A-360 |
DENSEI-LAMBDA |
PFHC module 500W/ 1000W | |
12 | PF5020 |
WON-TOP |
PRESS-FIT DIODE |