www.DataSheet4U.com PF0340A MOS FET Power Amplifier Module for UHF Band ADE-208-317B (Z) 3rd Edition July 1996 Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 43% Typ at 9.6 V 40% Typ at 4.8 V • Low power control current: 150 µA Typ Pin Arrangement • RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange) www.DataSheet4U.com PF0340A .
• Small package: 30 × 10 × 5.9 mm
• High efficiency: 43% Typ at 9.6 V 40% Typ at 4.8 V
• Low power control current: 150 µA Typ
Pin Arrangement
• RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange)
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PF0340A
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VPC Pin3 VDD Pin4 Pout
G GND
Z1
C1
FB1
C3
C4
FB2
C2
Z2
Pin
VPC
VDD
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = C4 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PF0341A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module | |
2 | PF0342A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module | |
3 | PF0343A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module | |
4 | PF0344A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module | |
5 | PF0345A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module | |
6 | PF03 |
Tyco Electronics |
40-860 MHz. Ultra-linear Opto Receiver Amplifier | |
7 | PF0310 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for VHF Band | |
8 | PF0310A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for VHF Band | |
9 | PF0311 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for VHF Band | |
10 | PF0313 |
Hitachi Semiconductor |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band | |
11 | PF0314 |
Hitachi Semiconductor |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band | |
12 | PF0314TE6 |
KEC |
EMI Filtering TVS |