PF0311 - Hitachi Semiconductor

PF0311 MOS FET Power Amplifier Module for VHF Band

PF0311 MOS FET Power Amplifier Module for VHF Band ADE-208-104B (Z) 3rd. Edition July 1996 Application VHF Band 150 to 174 MHz Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 50% Typ • Low power control current: 0.5 mA Max Pin Arrangement • RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange) PF0311 Internal Diagram and External Circ.

Features

• Small package: 30 × 10 × 5.9 mm
• High efficiency: 50% Typ
• Low power control current: 0.5 mA Max Pin Arrangement
• RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange) PF0311 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 C4 FB2 C2 Z2 Pin VPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = C4 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current.