The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8350G General Features ● VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Pa.
● VDS = 30V, ID = 50A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery management
● Motor controller and driver
k
● PWM applications e
● Load switch
Marking and pin assignment
ourceT Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
S Drain-Source Voltage
Parameter
ip Gate-Source Voltage
Drain Current-Continuous
h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1)
Symbol
VDS VGS ID
ID IDM
DFN5x6-8L
Rating
30 ±20 50 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PE83501 |
Peregrine Semiconductor |
3.5 GHz Low Power CMOS | |
2 | PE83502 |
Peregrine Semiconductor |
3.5 GHz Low Power CMOS | |
3 | PE83503 |
Peregrine Semiconductor |
3.5 GHz Low Power UltraCMOS | |
4 | PE83511 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS | |
5 | PE83512 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS | |
6 | PE83513 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS | |
7 | PE8307HS |
ChipSourceTek |
N-Channel Power | |
8 | PE8310DS |
ChipSourceTek |
N-Channel Power MOSFET | |
9 | PE83336 |
Peregrine Semiconductor |
3.0 GHz Integer-N PLL | |
10 | PE8050 |
Fairchild Semiconductor |
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers | |
11 | PE80H11 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
12 | PE80H13 |
semi one |
N-Channel Enhancement Mode Power MOSFET |