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PE8350G - ChipSourceTek

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PE8350G N-Channel Power MOSFET

The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8350G General Features ● VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Pa.

Features


● VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● Battery management
● Motor controller and driver k
● PWM applications e
● Load switch Marking and pin assignment ourceT Absolute Maximum Ratings (TC=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID IDM DFN5x6-8L Rating 30 ±20 50 3.

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