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The PE8307HS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 7A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 34mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Ap.
● VDS = 30V, ID = 7A RDS(ON) < 21mΩ @ VGS=10V
RDS(ON) < 34mΩ @ VGS=4.5V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
Marking and pin assignment
rceTek SOP-8
ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
S Parameter
Drain-Source Voltage
ip Gate-Source Voltage
Drain Current-Continuous
h Pulsed Drain Current (Note 1) C Maximum Power Dissipation
Symbol
VDS VGS ID IDM PD
Rating
30 ±20
7 30 1.4
Unit
V V A A W
Operating Junction and Stor.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PE8310DS |
ChipSourceTek |
N-Channel Power MOSFET |
|
| 2 | PE83336 |
Peregrine Semiconductor |
3.0 GHz Integer-N PLL |
|
| 3 | PE83501 |
Peregrine Semiconductor |
3.5 GHz Low Power CMOS |
|
| 4 | PE83502 |
Peregrine Semiconductor |
3.5 GHz Low Power CMOS |
|
| 5 | PE83503 |
Peregrine Semiconductor |
3.5 GHz Low Power UltraCMOS |
|
| 6 | PE8350G |
ChipSourceTek |
N-Channel Power MOSFET |
|
| 7 | PE83511 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS |
|
| 8 | PE83512 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS |
|
| 9 | PE83513 |
Peregrine Semiconductor |
DC - 1500 MHz Low Power UltraCMOS |
|
| 10 | PE8050 |
Fairchild Semiconductor |
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers |
|
| 11 | PE80H11 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 12 | PE80H13 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|