PE1012A - semi one

PE1012A N-Channel Enhancement Mode Power MOSFET

The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 0.8A ● RDS(ON) <300mΩ @ VGS=4.5V ● RDS(ON) <350mΩ @ VGS=2.5V ● RDS(ON) <600mΩ @ VGS=1.8V ● High .

Features

● VDS = 20V,ID = 0.8A
● RDS(ON) <300mΩ @ VGS=4.5V
● RDS(ON) <350mΩ @ VGS=2.5V
● RDS(ON) <600mΩ @ VGS=1.8V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●Load switch
●Power management Schematic diagram 3D G1 2S Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25к Unless otherwise noted) Drain-Source Voltage Gate
  –Source Voltage Parameter Continuous Drain Current(TJ=150к) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Tem.