PE1011E - semi one

PE1011E P-Channel Enhancement Mode Power MOSFET

The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V ● High Power and current handing cap.

Features

● VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Gate-Source ESD Protection Application
●Battery operated Systems
●Load/ power Switching Cell Phones,Pagers
●Power Supply Converter Circuits Schematic diagram Marking and pin Assignment SOT-523 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junct.