Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Forward Voltage Drop For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Applications High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Devic.
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Low Forward Voltage Drop
For Use in Low-Voltage, High-Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
High Forward Surge Current Capability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PDS540
Green 5A SCHOTTKY BARRIER RECTIFIER POWERDI®
Mechanical Data
Case: POWERDI®5
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS540Q |
Diodes |
5A SCHOTTKY BARRIER RECTIFIER | |
2 | PDS5100 |
Diodes Incorporated |
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
3 | PDS5100H |
Diodes Incorporated |
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
4 | PDS5100Q |
Diodes |
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
5 | PDS560 |
Diodes Incorporated |
5A SCHOTTKY BARRIER RECTIFIER | |
6 | PDS-721 |
ICP DAS |
Programmable Device Servers | |
7 | PDS04N15 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDS0744 |
Potens semiconductor |
N+P Channel MOSFETs | |
9 | PDS0960 |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PDS0966 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDS0976 |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDS0978 |
Potens semiconductor |
N-Channel MOSFETs |