PDS0960 - Potens semiconductor

PDS0960 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

 100V,15A, RDS(ON) =18mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 Networking
 Load Switch
 LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Power Dissipation (TC=25.