These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
60V,24A, RDS(ON) =52mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Motor Drive
Power Tools
LED Lighting
GDS
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) Drain Current
– Continuous (TC=100℃) Drain Current
– Pulsed1 Single Pulse Avalanche Energy2 S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDP6901 |
Potens semiconductor |
P-Channel MOSFETs | |
2 | PDP6902 |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDP6904 |
Potens semiconductor |
N-Channel MOSFETs | |
4 | PDP6905 |
Potens semiconductor |
P-Channel MOSFETs | |
5 | PDP6906 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDP6907 |
Potens semiconductor |
P-Channel MOSFETs | |
7 | PDP6908 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDP6960 |
Potens semiconductor |
N-Channel MOSFETs | |
9 | PDP6965A |
Potens semiconductor |
P-Channel MOSFETs | |
10 | PDP6966A |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDP6970 |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDP6974-5 |
Potens semiconductor |
N-Channel MOSFETs |