PDP6901 - Potens semiconductor

PDP6901 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

 -60V,-75A, RDS(ON) 9.5mΩ@VGS = -10V
 Fast switching
 Green Device Available
 Suit for -4.5V Gate Drive Applications Applications
 POL Applications
 Load Switch
 LED Application G DS S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Single Pulse Avalanche Energ.